Aluminum Nitride (AlN)

Aluminum nitride ceramic has “extreme” high thermal conductivity, corrosion resistance and low dielectric loss. The coefficient of thermal expansion is close to that of silicon. As a new generation of ceramic materials, the aluminum nitride substrate has good compatibility with circuit materials. It can be used for multilayer wiring which makes it an ideal material for large-scale integrated circuits, semiconductor module circuits and high-power devices.


  • LED solid-state lighting, high-frequency microwave devices, and communication modules;
  • Inverters for photovoltaic cells, wind energy generators and new energy vehicles;
  • Smelting non-ferrous metal crucibles, evaporation dishes, and magnetic fluid power generation devices;
  • High-temperature flattening machine corrosion-resistant parts.


  • “Extreme” high thermal conductivity

The thermal conductivity of aluminum nitride ceramic is the highest in all ceramic materials; similar to aluminum and more than 6 times higher than Alumina.

  • High electrical insulation capacity

Aluminum nitride ceramic has good insulation, low dielectric loss characteristic. Its thermal expansion is close to that of silicon.

  • Dense and No toxicity

The aluminum nitride is non toxic and is considered to replace the Beryllium oxide (BeO) in the semiconductor application and substrates.

Technical Characteristics – Aluminum Nitride (AlN)

Density(g/cm3 >3.3
Porosity(%) 0
Surface roughness (μm) 0.3~0.6
Warpage(‰) <2
Elastic Modulus(GPa) 320
Bending strength(MPa) ≥450
Thermal expansion(10-6/K) 2.2~3.6
Thermal conductivity room(W/m•K) ≥170
Max. use temperature(℃) 800*(Air) 1300(inert)
Volume resistivity (Ω·cm) ≥1000
Dielectric constant 1MHz 8~10
Dielectric loss 1MHz 3*10-4
Breakdown strength(Kv/mm) ≥17

Note: Standard dimension AlN substrates available in stock.  Please contact us for more information.